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dc.contributor.authorCabrera-González, Lisán David
dc.contributor.authorPáez-Hernández, Dayán
dc.contributor.authorStoecklin, Thierry
dc.contributor.authorDenis-Alpizar, Otoniel
dc.date.accessioned2023-02-20T15:00:04Z
dc.date.available2023-02-20T15:00:04Z
dc.date.issued2023
dc.identifier10.1039/d2cp03872b
dc.identifier.issn14639076
dc.identifier.urihttps://hdl.handle.net/20.500.12728/10193
dc.description.abstractThe first six-dimensional potential energy surface (PES) for the SiCSi + H2 complex is presented in this work. This surface is developed from a large number of ab initio energies computed at the explicitly correlated coupled-cluster level of theory together with the augmented correlation-consistent polarized valence triple zeta basis set (CCSD(T)-F12/aug-cc-pVTZ). These energies are fitted to an analytical function through a procedure that combines spline, least-squares, and kernel-based methods. Two minimums of similar depths were found at the equilibrium geometry of the SiCSi molecule. The dependence of the PES on the bending angle is analyzed. Furthermore, a reduced four-dimensional PES averaged over the H2 orientation is presented. Finally, the six-dimensional PES is used for computing the second virial coefficient of the SiCSi + H2 pair using classical and semi-classical methods.es_ES
dc.language.isoenes_ES
dc.publisherRoyal Society of Chemistryes_ES
dc.titleAn explicitly correlated six-dimensional potential energy surface for the SiCSi + H2 complexes_ES
dc.typeArticlees_ES


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